Si7461DP
www.vishay.com
P-Channel 60 V (D-S) MOSFET
Vishay Siliconix
PRODUCT SUMMARY
V DS (V) R DS(on) ( ? )
0.0145 at V GS = -10 V
-60
0.019 at V GS = -4.5 V
I D (A)
-14.4
-12.6
FEATURES
? TrenchFET ? Power MOSFETs
? Low thermal resistance PowerPAK ? package
with low 1.07 mm profile
? Material categorization:
For definitions of compliance please see
PowerPAK SO-8
www.vishay.com/doc?99912
S
Availa b le
6.15 mm
1
S
S
5.15 mm
2
3
S
G
D
4
G
8
7
D
D
6
5
D
Bottom View
Ordering Information: Si7461DP-T1-E3 (Lead (Pb)-free)
Si7461DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwis e noted)
D
P-Channel MOSFET
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
10 s
STEADY STATE
-60
± 20
UNIT
V
Continuous Drain Current (T J = 150 °C) a
T A = 25 °C
T A = 70 °C
I D
-14.4
-11.5
-8.6
-6.9
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a
Avalanche Current
Single Pulse Avalanche Energy
L = 1 mH
I DM
I S
I AS
E AS
-4.5
-60
50
125
-1.6
A
Maximum Power Dissipation a
T A = 25 °C
T A = 70 °C
P D
5.4
3.4
1.9
1.2
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T J , T stg
-55 to 150
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient a
Maximum Junction-to-Case (Drain)
t ? 10 s
Steady State
Steady State
R thJA
R thJC
18
52
1
23
65
1.3
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. See solder profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S13-2282-Rev. H, 04-Nov-13
1
Document Number: 72567
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数
SI7462DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) MOSFET
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SI7462DP-T1-GE3 功能描述:MOSFET 200V 4.1A 4.8W 130mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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SI7463DP 制造商:Vishay Siliconix 功能描述:MOSFET P POWERPAK
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SI7463DP-T1-E3 功能描述:MOSFET 40V 18.6A 5.4W 9.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7463DP-T1-GE3 功能描述:MOSFET 40V 18.6A 5.4W 9.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube